Comparison of TiₓSi 1-x O 2 mixed oxide and TiO₂ in SiO₂ nanocomposite dielectric properties at nanoscale

Christina Villeneuve-Faure (1) , M. Mitronika (2) , Laurent Boudou (1) , W Ravisy (2) , M.P. Besland (2) , Mireille Richard-Plouet (2) , Antoine Goullet (2)

1 LAPLACE-DSF - Diélectriques Solides et Fiabilité
2 IMN - Institut des Matériaux de Nantes Jean Rouxel

Thin dielectric films are involved in a lot of applications as MIM-capacitors. For this application, the target properties are high dielectric permittivity and low leakage current. To reach this goal, the relative merit of TiO 2 /SiO 2 -based mixed oxide and nanocomposite films is investigated in this paper. Results based on dielectric permittivity and current measurements at nanoscale emphasize a strong impact of dielectric films nano-structuration. Indeed, for the same level of current flowing through the dielectric layer, nanocomposite films exhibit a dielectric permittivity twice than the one of mixed oxide films. Moreover, the dielectric properties of the former are similar to those of classical high-k materials.

Mots clés: Silicon compounds; Solvents; Capacitance; Nanoscale devices; Dielectrics; Dielectric films; Leakage currents

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Christina Villeneuve-Faure, M. Mitronika, Laurent Boudou, W Ravisy, M.P. Besland, et al.. Comparison of TiₓSi 1-x O 2 mixed oxide and TiO₂ in SiO₂ nanocomposite dielectric properties at nanoscale. 4th International Conference on Dielectrics (ICD 2022), IEEE, Jul 2022, Palermo, Italy. pp.301-304, ⟨10.1109/ICD53806.2022.9863524⟩. ⟨hal-03863285⟩