Development of low-damage plasma etching processes for preserving AlGaN/GaN heterostructure integrity in MIS HEMT

Oleh Fesiienko (1, 2, 3) , Camille Petit-Etienne (2) , Maxime Darnon (1, 2) , Ali Soltani (1, 2) , Hassan Maher (1, 2) , Erwine Pargon (3)

1 LN2 - Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke]
2 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
3 LTM - Laboratoire des technologies de la microélectronique

Domaines: Micro et nanotechnologies/Microélectronique

Oleh Fesiienko, Camille Petit-Etienne, Maxime Darnon, Ali Soltani, Hassan Maher, et al.. Development of low-damage plasma etching processes for preserving AlGaN/GaN heterostructure integrity in MIS HEMT. Compound Semiconductors weeks, May 2022, Ann Arbor, United States. ⟨hal-03831356⟩