M -plane AlGaN digital alloy for microwire UV-B LEDs

Lucie Valera (1) , Vincent Grenier (1) , Sylvain Finot (2) , C. Bougerol (3) , Joël Eymery (4) , Gwénolé Jacopin (2) , Christophe Durand (1)

1 NPSC - Nanophysique et Semiconducteurs
2 NEEL - SC2G - Semi-conducteurs à large bande interdite
3 NEEL - NPSC - Nanophysique et Semiconducteurs
4 NRX - Nanostructures et Rayons X

The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five periods of two monolayer-thick layers of GaN and AlGaN (approximately 50% Al-content) is integrated into the middle of an n-p GaN/AlGaN junction to design core-shell wire- μLED. The optical emission of the active zone investigated by 5 K cathodoluminescence is consistent with the AlGaN bulk alloy behavior. Several contributions from 295 to 310 nm are attributed to the lesser thickness and/or composition fluctuations of AlGaN DA. Single-wire μLED is fabricated using a lithography process, and I–V measurements confirm a diode rectifying behavior. Room temperature UV electroluminescence originating from m-plane AlGaN DA is accomplished at 310 nm.

Domaines: Matière Condensée [cond-mat]; Matériaux

Lucie Valera, Vincent Grenier, Sylvain Finot, C. Bougerol, Joël Eymery, et al.. M -plane AlGaN digital alloy for microwire UV-B LEDs. Applied Physics Letters, 2023, 122 (14), pp.141101. ⟨10.1063/5.0141568⟩. ⟨cea-04058472⟩