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TiTe/Ge$_2$Sb$_2$Te$_5$ bi-layer-based Phase-Change Memory targeting storage class memory

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Abstract

In this work, we introduce an innovative Phase-Change Memory (PCM) based on a TiTe and Ge$_2$Sb$_2$Te$_5$ (GST) bi-layer stack that presents low resistance variability since the out-of-fabrication in 4 kb array. It allows creating reliably an intermixed system right from the first programming in the active volume of the device. TiTe/GST PCM exhibits higher speed, lower variability of intermediate resistance states and lower drift compared to standard GST. An endurance of more than 10$^8$ cycles can be achieved and we found a reduced cycle-to-cycle variability even after endurance stress. Such new TiTe/GST stack, based on our results, demonstrates to be a valuable candidate for PCM targeting Storage Class Memory applications.
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Dates and versions

cea-03927976 , version 1 (06-01-2023)

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Cite

G. Lama, M. Bernard, J. Garrione, N. Bernier, N. Castellani, et al.. TiTe/Ge$_2$Sb$_2$Te$_5$ bi-layer-based Phase-Change Memory targeting storage class memory. ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. pp.237-240, ⟨10.1109/ESSDERC55479.2022.9947157⟩. ⟨cea-03927976⟩
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