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Journal Articles IEEE Transactions on Electron Devices Year : 2020

Influence of substrate resistivity on porous silicon small-signal RF properties

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Abstract

This article provides guidelines to design porous silicon (PS) layers regarding optimization of small signal properties in passive structures for radio frequency (RF): insertion loss and crosstalk. Results are based on high-frequency measurements on 200-mm wafers and electromagnetic simulations up to 40 GHz. Using substrate resistivity below 1 Ohm.cm allows the best tradeoff with minimized PS thickness.
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Dates and versions

cea-03676642 , version 1 (24-05-2022)

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Geoffroy Godet, Emmanuel Augendre, Jose Lugo, Hélène Jacquinot, Frederic Xavier-Paul Gaillard, et al.. Influence of substrate resistivity on porous silicon small-signal RF properties. IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4654-4657. ⟨10.1109/TED.2020.3023063⟩. ⟨cea-03676642⟩
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