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Influence of substrate resistivity on porous silicon small-signal RF properties

Abstract : This article provides guidelines to design porous silicon (PS) layers regarding optimization of small signal properties in passive structures for radio frequency (RF): insertion loss and crosstalk. Results are based on high-frequency measurements on 200-mm wafers and electromagnetic simulations up to 40 GHz. Using substrate resistivity below 1 Ohm.cm allows the best tradeoff with minimized PS thickness.
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Submitted on : Tuesday, May 24, 2022 - 10:48:22 AM
Last modification on : Friday, June 3, 2022 - 3:23:16 AM
Long-term archiving on: : Tuesday, August 30, 2022 - 10:23:26 AM

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Geoffroy Godet, Emmanuel Augendre, Jose Lugo, Hélène Jacquinot, Frederic Xavier-Paul Gaillard, et al.. Influence of substrate resistivity on porous silicon small-signal RF properties. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4654-4657. ⟨10.1109/TED.2020.3023063⟩. ⟨cea-03676642⟩

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