Influence of substrate resistivity on porous silicon small-signal RF properties

Geoffroy Godet (1) , Emmanuel Augendre (2) , Jose Lugo (2) , Hélène Jacquinot (2) , Frederic Xavier-Paul Gaillard (2) , Thomas Lorne (2) , Emmanuel Rolland (2) , Thierry Taris (3) , Florence Servant (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 DCOS - Département Composants Silicium
3 IMS - Laboratoire de l'intégration, du matériau au système

This article provides guidelines to design porous silicon (PS) layers regarding optimization of small signal properties in passive structures for radio frequency (RF): insertion loss and crosstalk. Results are based on high-frequency measurements on 200-mm wafers and electromagnetic simulations up to 40 GHz. Using substrate resistivity below 1 Ohm.cm allows the best tradeoff with minimized PS thickness.

Mots clés: Crosstalk; linear attenuation coefficient; porous silicon (PS); S-parameters; substrate resistivity

Domaines: Réseaux et télécommunications [cs.NI]

Geoffroy Godet, Emmanuel Augendre, Jose Lugo, Hélène Jacquinot, Frederic Xavier-Paul Gaillard, et al.. Influence of substrate resistivity on porous silicon small-signal RF properties. IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4654-4657. ⟨10.1109/TED.2020.3023063⟩. ⟨cea-03676642⟩