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Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

Abstract : SETs (Single-Electron-Transistors) arouse growing interest for their very low energy consumption. For future industrialization, it is crucial to show a CMOS-compatible fabrication of SETs, and a key prerequisite is the patterning of sub-20 nm Si Nano-Pillars (NP) with an embedded thin SiO2 layer. In this work, we report the patterning of such multi-layer isolated NP with e-beam lithography combined with a Reactive Ion Etching (RIE) process. The Critical Dimension (CD) uniformity and the robustness of the Process of Reference are evaluated. Characterization methods, either by CD-SEM for the CD, or by TEM cross-section for the NP profile, are compared and discussed.
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Submitted on : Friday, October 29, 2021 - 4:35:41 PM
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Marie-Line Pourteau, Ahmed Gharbi, Pierre Brianceau, Jacques-Alexandre Dallery, Fabien Laulagnet, et al.. Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration. Micro and Nano Engineering, Elsevier, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩. ⟨cea-03409432⟩

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