Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function - Archive ouverte HAL Access content directly
Journal Articles Solid-State Electronics Year : 2021

Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function

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Abstract

A new protocol based on Y-function is used for accurate statistical extraction of electrical parameters of High Electron Mobility Transistor (HEMT) devices for GaN technology. This protocol presented here is used for extraction of relevant electrical parameters such as oxide capacitance, threshold voltage, effective mobilities and access resistance. This study has been verified over a large range of channel lengths for two normally-off HEMT GaN wafers having different levels of access resistances.
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Dates and versions

cea-03250807 , version 1 (05-06-2021)

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R. Kom Kammeugne, C. Leroux, J. Cluzel, L. Vauche, C. Le Royer, et al.. Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function. Solid-State Electronics, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩. ⟨cea-03250807⟩
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