Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function

R. Kom Kammeugne (1) , C. Leroux (1) , J. Cluzel (1) , L. Vauche (1) , C. Le Royer (1) , A. Krakovinsky (1) , R. Gwoziecki (1) , J. Biscarrat (1) , F. Gaillard (1) , M. Charles (1) , E. Bano (2) , G. Ghibaudo (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

A new protocol based on Y-function is used for accurate statistical extraction of electrical parameters of High Electron Mobility Transistor (HEMT) devices for GaN technology. This protocol presented here is used for extraction of relevant electrical parameters such as oxide capacitance, threshold voltage, effective mobilities and access resistance. This study has been verified over a large range of channel lengths for two normally-off HEMT GaN wafers having different levels of access resistances.

Mots clés: Statistical electrical characterization; Y-functionNormally-off; High-electron-mobility-transistor (HEMT); Gallium nitride (GaN); Electron mobility2; DEG

Domaines: Sciences de l'ingénieur [physics]; Physique [physics]

R. Kom Kammeugne, C. Leroux, J. Cluzel, L. Vauche, C. Le Royer, et al.. Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function. Solid-State Electronics, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩. ⟨cea-03250807⟩