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MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric

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cea-02352759 , version 1 (07-11-2019)

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  • HAL Id : cea-02352759 , version 1

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Hugo Casademont, Laure Fillaud, Xavier Lefèvre, Renaud Cornut, Bruno Jousselme, et al.. MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric. Imagine Nano, Mar 2015, Bilbao, Spain. ⟨cea-02352759⟩
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