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MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric

Hugo Casademont 1 Laure Fillaud 1 Xavier Lefèvre 1 Renaud Cornut 1 Bruno Jousselme 1 Vincent Derycke 1 
1 LICSEN - Laboratoire Innovation en Chimie des Surfaces et NanoSciences
NIMBE UMR 3685 - Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M)
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Conference papers
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https://hal-cea.archives-ouvertes.fr/cea-02352759
Contributor : Serge Palacin Connect in order to contact the contributor
Submitted on : Thursday, November 7, 2019 - 8:06:50 AM
Last modification on : Wednesday, December 15, 2021 - 11:20:16 AM

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  • HAL Id : cea-02352759, version 1

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CEA | CNRS | PUBNIMBE | INC-CNRS | IRAMIS-NIMBE | CEA-UPSAY | UNIV-PARIS-SACLAY | LRN | GS-ENGINEERING | IRAMIS | GS-CHIMIE | INSTITUT-SCIENCES-LUMIERE

Citation

Hugo Casademont, Laure Fillaud, Xavier Lefèvre, Renaud Cornut, Bruno Jousselme, et al.. MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric. Imagine Nano, Mar 2015, Bilbao, Spain. ⟨cea-02352759⟩

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