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MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric

Hugo Casademont 1 Laure Fillaud 1 Xavier Lefèvre 1 Renaud Cornut 1 Bruno Jousselme 1 Vincent Derycke 1
1 LICSEN - Laboratoire Innovation en Chimie des Surfaces et NanoSciences
NIMBE UMR 3685 - Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M)
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https://hal-cea.archives-ouvertes.fr/cea-02352759
Contributor : Serge Palacin Connect in order to contact the contributor
Submitted on : Thursday, November 7, 2019 - 8:06:50 AM
Last modification on : Thursday, July 1, 2021 - 4:44:40 PM

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  • HAL Id : cea-02352759, version 1

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Hugo Casademont, Laure Fillaud, Xavier Lefèvre, Renaud Cornut, Bruno Jousselme, et al.. MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric. Imagine Nano, Mar 2015, Bilbao, Spain. ⟨cea-02352759⟩

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