A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained SiP - Archive ouverte HAL Access content directly
Journal Articles Semiconductor Science and Technology Year : 2017

A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained SiP

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Abstract

We have compared co-flow and cyclic deposition/etch processes for the selective epitaxial growth of SiP layers. High growth rates, relatively low resistivities and significant amounts of tensile strain (up to 10 nm min(-1), 0.55 mOhm cm and a strain equivalent to 1.06% of substitutional C in Si C layers) were obtained at 700 degrees C, 760 Torr with a co-flow approach and a SiH2Cl2 + PH3 + HCl chemistry. This approach was successfully used to thicken the sources and drains regions of n-type fin-shaped Field Effect Transistors. Meanwhile, the (Si2H6 + PH3/HCl + GeH4) CDE process evaluated yielded at 600 degrees C, 80 Torr even lower resistivities (0.4 mOhm cm, typically), at the cost however of the tensile strain which was lost due to (i) the incorporation of Ge atoms (1.5%, typically) into the lattice during the selective etch steps and (ii) a reduction by a factor of two of the P atomic concentration in CDE layers compared to that in layers grown in a single step (5 x 10(20) cm(-3) compared to 10(21) cm(-3)).
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Dates and versions

cea-02202443 , version 1 (31-07-2019)

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J. M. Hartmann, M. Veillerot, B. Previtali. A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained SiP. Semiconductor Science and Technology, 2017, 32 (10), pp.104003. ⟨10.1088/1361-6641/aa82d4⟩. ⟨cea-02202443⟩
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