A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained SiP - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Accéder directement au contenu
Article Dans Une Revue Semiconductor Science and Technology Année : 2017

A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained SiP

Résumé

We have compared co-flow and cyclic deposition/etch processes for the selective epitaxial growth of SiP layers. High growth rates, relatively low resistivities and significant amounts of tensile strain (up to 10 nm min(-1), 0.55 mOhm cm and a strain equivalent to 1.06% of substitutional C in Si C layers) were obtained at 700 degrees C, 760 Torr with a co-flow approach and a SiH2Cl2 + PH3 + HCl chemistry. This approach was successfully used to thicken the sources and drains regions of n-type fin-shaped Field Effect Transistors. Meanwhile, the (Si2H6 + PH3/HCl + GeH4) CDE process evaluated yielded at 600 degrees C, 80 Torr even lower resistivities (0.4 mOhm cm, typically), at the cost however of the tensile strain which was lost due to (i) the incorporation of Ge atoms (1.5%, typically) into the lattice during the selective etch steps and (ii) a reduction by a factor of two of the P atomic concentration in CDE layers compared to that in layers grown in a single step (5 x 10(20) cm(-3) compared to 10(21) cm(-3)).
Fichier non déposé

Dates et versions

cea-02202443 , version 1 (31-07-2019)

Identifiants

Citer

J. M. Hartmann, M. Veillerot, B. Previtali. A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained SiP. Semiconductor Science and Technology, 2017, 32 (10), pp.104003. ⟨10.1088/1361-6641/aa82d4⟩. ⟨cea-02202443⟩
61 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More