 |
Conference papers
Stacked-Wires FETs for advanced CMOS scaling
Abstract : We present recent progress on vertically stacked-wires MOSFETs with a replacement metal gate process for CMOS scaling beyond FinFET technology. Key technological challenges (such as 3D integration process including inner spacer, mobility, and strain engineering) will be discussed in relation to recent research results.
Cited literature [2 references]
https://hal-cea.archives-ouvertes.fr/cea-01973414
Contributor : SYLVAIN BARRAUD Connect in order to contact the contributor
Submitted on : Tuesday, January 8, 2019 - 12:05:55 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM
Long-term archiving on: : Tuesday, April 9, 2019 - 4:10:02 PM
Contributor : SYLVAIN BARRAUD Connect in order to contact the contributor
Submitted on : Tuesday, January 8, 2019 - 12:05:55 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM
Long-term archiving on: : Tuesday, April 9, 2019 - 4:10:02 PM
File
7-Barraud_SSDM2017.pdf
Files produced by the author(s)