2D vertical field-effect transistor

Daniela Di Felice (1) , Yannick J. Dappe (1)

1 GMT - Groupe Modélisation et Théorie

Within the framework of 2D materials, we present four theoretical models of a vertical field-effect transistor (FET) composed of simple alternate graphene and MoS$_2$ layers. The electronic transport properties at a specific graphene/MoS$_2$ interface in each configuration are investigated by focusing in particular on the current as a function of the gate voltage. The gate voltage, simulated with a shift of the bands of a specific layer, allows us to tune the current at the interface and the charge transfer between the planes. This analysis of the charge transfer as a function of the gate voltage reveals a strong connection with the transport characteristics as the slope of the current curve. The analysis of physical phenomena at the graphene/MoS$_2$ interface can further improve the 2D vertical FET performance and contribute to the development of new 2D nanotechnology.

Mots clés: graphene and 2D materials; density functional theory; electronic transport; transistor

Domaines: Physique [physics]

Daniela Di Felice, Yannick J. Dappe. 2D vertical field-effect transistor. Nanotechnology, 2018, 29, pp.505708. ⟨10.1088/1361-6528/aae406⟩. ⟨cea-01936725⟩