# 2D vertical field-effect transistor

* Corresponding author
1 GMT - Groupe Modélisation et Théorie
IRAMIS - Institut Rayonnement Matière de Saclay, SPEC - UMR3680 - Service de physique de l'état condensé
Abstract : Within the framework of 2D materials, we present four theoretical models of a vertical field-effect transistor (FET) composed of simple alternate graphene and MoS$_2$ layers. The electronic transport properties at a specific graphene/MoS$_2$ interface in each configuration are investigated by focusing in particular on the current as a function of the gate voltage. The gate voltage, simulated with a shift of the bands of a specific layer, allows us to tune the current at the interface and the charge transfer between the planes. This analysis of the charge transfer as a function of the gate voltage reveals a strong connection with the transport characteristics as the slope of the current curve. The analysis of physical phenomena at the graphene/MoS$_2$ interface can further improve the 2D vertical FET performance and contribute to the development of new 2D nanotechnology.
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Cited literature [38 references]

https://hal-cea.archives-ouvertes.fr/cea-01936725
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Submitted on : Tuesday, November 27, 2018 - 3:38:11 PM
Last modification on : Tuesday, January 4, 2022 - 4:42:56 AM

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### Citation

Daniela Di Felice, Yannick Dappe. 2D vertical field-effect transistor. Nanotechnology, Institute of Physics, 2018, 29, pp.505708. ⟨10.1088/1361-6528/aae406⟩. ⟨cea-01936725⟩

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