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2D vertical field-effect transistor

Daniela Di Felice 1 Yannick J. Dappe 1, * 
* Corresponding author
1 GMT - Groupe Modélisation et Théorie
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
Abstract : Within the framework of 2D materials, we present four theoretical models of a vertical field-effect transistor (FET) composed of simple alternate graphene and MoS$_2$ layers. The electronic transport properties at a specific graphene/MoS$_2$ interface in each configuration are investigated by focusing in particular on the current as a function of the gate voltage. The gate voltage, simulated with a shift of the bands of a specific layer, allows us to tune the current at the interface and the charge transfer between the planes. This analysis of the charge transfer as a function of the gate voltage reveals a strong connection with the transport characteristics as the slope of the current curve. The analysis of physical phenomena at the graphene/MoS$_2$ interface can further improve the 2D vertical FET performance and contribute to the development of new 2D nanotechnology.
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Submitted on : Tuesday, November 27, 2018 - 3:38:11 PM
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Daniela Di Felice, Yannick J. Dappe. 2D vertical field-effect transistor. Nanotechnology, Institute of Physics, 2018, 29, pp.505708. ⟨10.1088/1361-6528/aae406⟩. ⟨cea-01936725⟩



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