CVD nanodiamond thin films as high yield photocathodes driven by UV laser pulses

Jean-Paul Mazellier (1) , Cyril Di Giola (1) , Pierre Legagneux (1) , Clément Hébert (2) , Emmanuel Scorsone (2) , Philippe Bergonzo (2)

1 Thales Research and Technology [Palaiseau]
2 LCD-LIST - Laboratoire Capteurs Diamant

We present here an UV (266nm) photoemission setup dedicated to measure properties of conductive materials under DC extraction field as photocathodes. We have successfully tested copper, as reference material, and silicon samples. It allowed us testing photoemission properties of thin CVD nanodiamond films on silicon substrates. We demonstrate a strong influence on silicon doping type on the photoemission yield, pointing out a clear influence of the nanodiamond-silicon interface in the photoemission process. Furthermore, the nanodiamond-silicon structure exhibits one order of magnitude higher photoemission current compared to copper test samples.

Keywords: doping; elemental semiconductors; photocathodes; semiconductor thin films; ultraviolet spectra; CVD nanodiamond thin films; high yield photocathodes; UV laser pulses; UV photoemission setup; conductive materials; DC extraction field; reference material; silicon substrates; silicon doping; photoemission yield; nanodiamond-silicon interface; nanodiamond-silicon structure; photoemission current; wavelength 266 nm; C-Si; Si; Cu; photoemission; nanodiamond; electron beam; Cathodes; Silicon; chemical vapour deposition; copper; diamond

Domains: Micro and nanotechnologies/Microelectronics; Materials Science [cond-mat.mtrl-sci]; Optics / Photonic

Jean-Paul Mazellier, Cyril Di Giola, Pierre Legagneux, Clément Hébert, Emmanuel Scorsone, et al.. CVD nanodiamond thin films as high yield photocathodes driven by UV laser pulses. 2014 27th International Vacuum Nanoelectronics Conference (IVNC), Jul 2014, Engelberg, Switzerland. pp.6894736, ⟨10.1109/IVNC.2014.6894736⟩. ⟨cea-01913425⟩