Interface water diffusion in silicon direct bonding - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2016

Interface water diffusion in silicon direct bonding

(1) , (1) , (1) , (1) , (2) , (2) , (3) , (3)


The kinetics of water diffusion through the gap formed by the direct bonding of two silicon wafers is studied using two different techniques. X-ray reflectivity is able to monitor the interface density changes associated with the water front progression. The water intake is also revealed through the defect creation upon annealing, creating a rim-like pattern whose extent also gives the water diffusion law. At room temperature, the kinetics observed by either technique are consistent with the Lucas-Washburn law for diffusion through a gap width smaller than 1 nm, excluding any significant no-slip layer thickness. Published by AIP Publishing.
Not file

Dates and versions

cea-01851936 , version 1 (31-07-2018)



M. Tedjini, Frank Fournel, Hubert Moriceau, V. Larrey, Didier Landru, et al.. Interface water diffusion in silicon direct bonding. Applied Physics Letters, 2016, 109 (11), pp.111603. ⟨10.1063/1.4962464⟩. ⟨cea-01851936⟩
103 View
0 Download



Gmail Facebook Twitter LinkedIn More