Interface water diffusion in silicon direct bonding

Abstract : The kinetics of water diffusion through the gap formed by the direct bonding of two silicon wafers is studied using two different techniques. X-ray reflectivity is able to monitor the interface density changes associated with the water front progression. The water intake is also revealed through the defect creation upon annealing, creating a rim-like pattern whose extent also gives the water diffusion law. At room temperature, the kinetics observed by either technique are consistent with the Lucas-Washburn law for diffusion through a gap width smaller than 1 nm, excluding any significant no-slip layer thickness. Published by AIP Publishing.
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https://hal-cea.archives-ouvertes.fr/cea-01851936
Contributor : Jérôme Planès <>
Submitted on : Tuesday, July 31, 2018 - 12:05:52 PM
Last modification on : Thursday, April 4, 2019 - 5:08:04 PM

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M. Tedjini, Frank Fournel, Hubert Moriceau, V. Larrey, Didier Landru, et al.. Interface water diffusion in silicon direct bonding. Applied Physics Letters, American Institute of Physics, 2016, 109 (11), pp.111603. ⟨10.1063/1.4962464⟩. ⟨cea-01851936⟩

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