Interface water diffusion in silicon direct bonding

M. Tedjini (1) , Frank Fournel (1) , Hubert Moriceau (1) , V. Larrey (1) , Didier Landru (2) , Oleg Kononchuk (2) , Samuel Tardif (3) , Francois Rieutord (3)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 SOITEC SA
3 NRS - Nanostructures et Rayonnement Synchrotron

The kinetics of water diffusion through the gap formed by the direct bonding of two silicon wafers is studied using two different techniques. X-ray reflectivity is able to monitor the interface density changes associated with the water front progression. The water intake is also revealed through the defect creation upon annealing, creating a rim-like pattern whose extent also gives the water diffusion law. At room temperature, the kinetics observed by either technique are consistent with the Lucas-Washburn law for diffusion through a gap width smaller than 1 nm, excluding any significant no-slip layer thickness. Published by AIP Publishing.

Domaines: Physique [physics]

M. Tedjini, Frank Fournel, Hubert Moriceau, V. Larrey, Didier Landru, et al.. Interface water diffusion in silicon direct bonding. Applied Physics Letters, 2016, 109 (11), pp.111603. ⟨10.1063/1.4962464⟩. ⟨cea-01851936⟩