Skip to Main content Skip to Navigation
Conference papers

TID response of various field programmable gate arrays and memory devices

Jean-Marc Armani 1 J.L. Leray 2 R. Gaillard V. Iluta
1 DACLE-LIST - Département d'Architectures, Conception et Logiciels Embarqués-LIST
2 DAM/DIF - DAM Île-de-France
Abstract : The Total Ionizing Dose (TID) tolerance of some FPGAs and memory devices has been evaluated. Two FPGAs and five memories of various types and technologies have been irradiated. Results show that the total dose tolerance of the tested FPGAs is around 200 Gy. The SRAM is the most tolerant device with a failure dose level over 2.4 kGy. Two Flash memories were still well-functioning after 1 kGy.
Keywords : Field programmable gate arrays (FPGA) Total Ionizing Dose Total dose MRAM Flash Dose levels Static random access storage Signal receivers Reconfigurable hardware Radiation effects MRAM devices Logic gates Ionizing radiation Flash memory CMOS integrated circuits
Document type :
Conference papers
Complete list of metadatas
https://hal-cea.archives-ouvertes.fr/cea-01839850
Contributor : Léna Le Roy <>
Submitted on : Monday, July 16, 2018 - 10:05:40 AM
Last modification on : Monday, February 10, 2020 - 6:14:16 PM

Identifiers

Collections

CEA | CEA-UPSAY | DRT | LIST | UNIV-PARIS-SACLAY | DAM

Citation

Jean-Marc Armani, J.L. Leray, R. Gaillard, V. Iluta. TID response of various field programmable gate arrays and memory devices. 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2015, Moscow, Russia. ⟨10.1109/RADECS.2015.7365686⟩. ⟨cea-01839850⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

128