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Conference papers
TID response of various field programmable gate arrays and memory devices
Abstract : The Total Ionizing Dose (TID) tolerance of some FPGAs and memory devices has been evaluated. Two FPGAs and five memories of various types and technologies have been irradiated. Results show that the total dose tolerance of the tested FPGAs is around 200 Gy. The SRAM is the most tolerant device with a failure dose level over 2.4 kGy. Two Flash memories were still well-functioning after 1 kGy.
Keywords :
Radiation effects
Reconfigurable hardware
Signal receivers
Static random access storage
Dose levels
Flash
MRAM
Total dose
Total Ionizing Dose
Field programmable gate arrays (FPGA)
MRAM devices
Logic gates
Ionizing radiation
Flash memory
CMOS integrated circuits
Random access memory
Lattices
Temperature measurement
Camera
instrumentation
nuclear instrumentation
Dose measurement
radiation hardening
total ionizing dose tolerance
https://hal-cea.archives-ouvertes.fr/cea-01839850
Contributor : Léna Le Roy Connect in order to contact the contributor
Submitted on : Thursday, December 23, 2021 - 1:24:24 PM
Last modification on : Thursday, February 17, 2022 - 10:08:06 AM
Contributor : Léna Le Roy Connect in order to contact the contributor
Submitted on : Thursday, December 23, 2021 - 1:24:24 PM
Last modification on : Thursday, February 17, 2022 - 10:08:06 AM
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