TID response of various field programmable gate arrays and memory devices

Jean-Marc Armani (1) , J.L. Leray (2) , Rémi Gaillard (3) , V. Iluta (4)

1 LFIC (CEA, LIST) - Laboratoire Fiabilité et Intégration de Capteurs (CEA, LIST)
2 DAM/DIF - DAM Île-de-France
3 Independent Consultant
4 ERMES Saclay

The Total Ionizing Dose (TID) tolerance of some FPGAs and memory devices has been evaluated. Two FPGAs and five memories of various types and technologies have been irradiated. Results show that the total dose tolerance of the tested FPGAs is around 200 Gy. The SRAM is the most tolerant device with a failure dose level over 2.4 kGy. Two Flash memories were still well-functioning after 1 kGy.

Mots clés: Radiation effects; Reconfigurable hardware; Signal receivers; Static random access storage; Dose levels; Flash; MRAM; Total dose; Total Ionizing Dose; Field programmable gate arrays (FPGA); MRAM devices; Logic gates; Ionizing radiation; Flash memory; CMOS integrated circuits; Random access memory; Lattices; Temperature measurement; Camera; instrumentation; nuclear instrumentation; Dose measurement; radiation hardening; total ionizing dose tolerance

Domaines: Instrumentations et Détecteurs [physics.ins-det]; Micro et nanotechnologies/Microélectronique

Jean-Marc Armani, J.L. Leray, Rémi Gaillard, V. Iluta. TID response of various field programmable gate arrays and memory devices. 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2015, Moscow, Russia. pp.7365686, ⟨10.1109/RADECS.2015.7365686⟩. ⟨cea-01839850⟩