From epitaxy to converters topologies what issues for 200 mm GaN/Si?

L. Di Cioccio (1) , E. Morvan (1) , M. Charles (1) , P. Perichon (2) , A. Torres (1) , F. Ayel (3) , D. Bergogne (3) , Y. Baines (1) , M. Fayolle (1) , R. Escoffier (1) , W. Vandendaele (1) , D. Barranger (1) , G. Garnier (1) , L. Mendizabal (1) , B. Thollin (1) , M. Plissonnier (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LITEN - Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux
3 DACLE-LIST - Département d'Architectures, Conception et Logiciels Embarqués-LIST

Energy is one of the main societal challenges of the 21th century. With the growth of population and cities, CO2 emission reduction, efficiency improvements especially in transportation modes will have to be enhanced. Cost will the main driver of power devices. This paper reviews the developments at CEA-Leti in power electronics. A complete GaN on 200 mm line has been implemented. For each stage of device realization a discussion of the issues will be done.

Mots clés: Gallium nitride; Emission control; Electron devices; Carbon dioxide; Emission reduction; Population statistics; Efficiency improvement; Power devices; Transportation mode; Power semiconductor devices

Domaines: Sciences de l'ingénieur [physics]

L. Di Cioccio, E. Morvan, M. Charles, P. Perichon, A. Torres, et al.. From epitaxy to converters topologies what issues for 200 mm GaN/Si?. 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, DC, United States. pp.16.5.1-16.5.4, ⟨10.1109/IEDM.2015.7409712⟩. ⟨cea-01839849⟩