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Conference papers

From epitaxy to converters topologies what issues for 200 mm GaN/Si?

Abstract : Energy is one of the main societal challenges of the 21th century. With the growth of population and cities, CO2 emission reduction, efficiency improvements especially in transportation modes will have to be enhanced. Cost will the main driver of power devices. This paper reviews the developments at CEA-Leti in power electronics. A complete GaN on 200 mm line has been implemented. For each stage of device realization a discussion of the issues will be done.
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Contributor : Léna Le Roy Connect in order to contact the contributor
Submitted on : Monday, July 16, 2018 - 10:05:33 AM
Last modification on : Thursday, February 17, 2022 - 10:08:06 AM



L. Di Cioccio, E. Morvan, M. Charles, P. Perichon, A. Torres, et al.. From epitaxy to converters topologies what issues for 200 mm GaN/Si?. 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, DC, United States. pp.16.5.1-16.5.4, ⟨10.1109/IEDM.2015.7409712⟩. ⟨cea-01839849⟩



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