Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface

M C Richter (1, 2) , J M Mariot (3) , C M Gafoor (2) , L Nicolaï (2, 4) , O. Heckmann (1, 2) , U Djukic (2) , W Ndiaye (2) , I Vobornik (5) , J Fujii (5) , Nick Barrett (1) , V Feyer (6) , C M Schneider (6) , K M Hricovini (1, 2)

1 LENSIS - Laboratoire d'Etude des NanoStructures et Imagerie de Surface
2 UCP - Université de Cergy Pontoise
3 LCPMR - Laboratoire de Chimie Physique - Matière et Rayonnement
4 LMU - Ludwig Maximilian University [Munich] = Ludwig Maximilians Universität München
5 TASC - Laboratorio Nazionale TASC
6 JCNS - PGI, JARA-FIT - Jülich Centre for Neutron Science

Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra.

Mots clés: Indium arsenide; Bismuth; Chemical reactivity; Circular pattern morphology; PEEM; ARPES

Domaines: Physique [physics]

M C Richter, J M Mariot, C M Gafoor, L Nicolaï, O. Heckmann, et al.. Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2016, 651, pp.147 - 153. ⟨10.1016/j.susc.2016.03.032⟩. ⟨cea-01481529⟩