Manganese behaviour in ZnO layers deposited by magnetron sputtering for spintronic application - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (a) Year : 2008

Manganese behaviour in ZnO layers deposited by magnetron sputtering for spintronic application

(1) , (1) , (2) , (3)
1
2
3

Abstract

In this work, we carry out structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering, using transmission electron microscopy (TEM). On top of sapphire (0001) substrates, Mn rich precipitates and an interface reaction layer are observed following the deposition of Zn(Mn)O layers above 500 °C. The crystalline quality of ZnO layers deposited by magnetron sputtering is highly improved at 500 °C as well as the measured ferromagnetic response.
Not file

Dates and versions

cea-00273866 , version 1 (16-04-2008)

Identifiers

  • HAL Id : cea-00273866 , version 1

Cite

Morad Abouzaid, Pierre Ruterana, C. Liu, H . Morkoç. Manganese behaviour in ZnO layers deposited by magnetron sputtering for spintronic application. physica status solidi (a), 2008, 205 (1), pp.80-82. ⟨cea-00273866⟩
25 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More