Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 µm

D. Navarro-Urrios (1) , A. Pitanti (1) , N. Daldosso (1) , Fabrice Gourbilleau (2) , Richard Rizk (2) , G. Pucker (3) , L. Pavesi (1)

1 Laboratorio di Nanoscienze
2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
3 FBK - Fondazione Bruno Kessler [Trento, Italy]

A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystals (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other characterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with pumping flux of up to 6 dB/cm for 3x1020 photons/cm2 s. By comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination.

Domaines: Optique [physics.optics]

D. Navarro-Urrios, A. Pitanti, N. Daldosso, Fabrice Gourbilleau, Richard Rizk, et al.. Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 µm. Applied Physics Letters, 2008, 92, pp.051101. ⟨cea-00273527⟩