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Fluorescence dynamics and energy migration in Er3+-doped SRSO structure

Antoine Al Choueiry 1 Anne-Marie Jurdyc 1 Bernard Jacquier 1 Fabrice Gourbilleau 2 Richard Rizk 2
1 LPCML - Laboratoire de Physico-Chimie des Matériaux Luminescents
2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
Abstract : Decay time properties of erbium ions in silicon rich silicon oxide multilayers are reported. A non-exponential time behaviour for the 4I13/2 decay profile is observed and is interpreted in a diffusion-limited model. Furthermore, an appreciable increase of the lifetime of the 4I13/2 is observed when the sample temperature is lower than 50 K. The lifetime dependence of the 4I13/2 as a function of temperature was successfully fitted with a model taking into account the temperature dependence of the energy migration between Er3+ ions in the presence of quenching impurities.
Keywords : Diffusion-limited model Erbium decay time Energy migration Silicon rich silicon oxide multilayers
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Journal articles
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https://hal-cea.archives-ouvertes.fr/cea-00273171
Contributor : Chantal Brassy <>
Submitted on : Monday, April 14, 2008 - 4:07:23 PM
Last modification on : Thursday, January 14, 2021 - 9:45:59 AM

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CNRS | CEA | DSM-IRAMIS | NIMPH-CIMAP | COMUE-NORMANDIE | IRAMIS-CIMAP | UNIV-LYON1 | CEA-DRF | ENSICAEN | UNICAEN | UDL

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Antoine Al Choueiry, Anne-Marie Jurdyc, Bernard Jacquier, Fabrice Gourbilleau, Richard Rizk. Fluorescence dynamics and energy migration in Er3+-doped SRSO structure. Materials Science and Engineering: B, Elsevier, 2008, 146, pp.157-159. ⟨10.1016/j.mseb.2007.07.061⟩. ⟨cea-00273171⟩

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