Fluorescence dynamics and energy migration in Er3+-doped SRSO structure

Antoine Al Choueiry (1) , Anne-Marie Jurdyc (1) , Bernard Jacquier (1) , Fabrice Gourbilleau (2) , Richard Rizk (2)

1 LPCML - Laboratoire de Physico-Chimie des Matériaux Luminescents
2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique

Decay time properties of erbium ions in silicon rich silicon oxide multilayers are reported. A non-exponential time behaviour for the 4I13/2 decay profile is observed and is interpreted in a diffusion-limited model. Furthermore, an appreciable increase of the lifetime of the 4I13/2 is observed when the sample temperature is lower than 50 K. The lifetime dependence of the 4I13/2 as a function of temperature was successfully fitted with a model taking into account the temperature dependence of the energy migration between Er3+ ions in the presence of quenching impurities.

Keywords: Silicon rich silicon oxide multilayers; Erbium decay time; Energy migration; Diffusion-limited model

Domains: Physics [physics]; Physics [physics]; Optics [physics.optics]

Antoine Al Choueiry, Anne-Marie Jurdyc, Bernard Jacquier, Fabrice Gourbilleau, Richard Rizk. Fluorescence dynamics and energy migration in Er3+-doped SRSO structure. Materials Science and Engineering: B, 2008, 146, pp.157-159. ⟨10.1016/j.mseb.2007.07.061⟩. ⟨cea-00273171⟩