Optimum functionalization of Si nanowire FET for electrical detection of DNA hybridization

R. Midahuen (1) , B. Previtali (1) , C. Fontelaye (1) , G. Nonglaton (1) , V. Stambouli (2) , S. Barraud (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LMGP - Laboratoire des matériaux et du génie physique

In this work, we demonstrate a wafer-scale fabrication of biologically sensitive Si nanowire FET for pH sensing and electrical detection of deoxyribonucleic acid (DNA) hybridization. Based on conventional "top-down" CMOS compatible technology, our bioFETs explore a wide range of design (nanowires (NW), nanoribbons (NR), and honeycomb (HC) structures) with opening access scaled down to only 120 nm. After device fabrication, I DS-V BG transfer and I DS-V DS output characteristics show a conventional n-type FET behavior with an I ON /I OFF value higher than 10 5 , as well as an increase of threshold voltage as the NW width is reduced. Then, using a capacitive coupling in our dually-gated Si bioFETs, the pH sensitivity is enhanced with a pH response up to 600 mV/pH. Finally, we successfully detected an increase of threshold voltage of n-type silicon nanowires (SiNWs) due to hybridized target DNA molecules.

Mots clés: Biosensing; ISFET; DNA; silicon nanowire

Domaines: Physique [physics]

R. Midahuen, B. Previtali, C. Fontelaye, G. Nonglaton, V. Stambouli, et al.. Optimum functionalization of Si nanowire FET for electrical detection of DNA hybridization. IEEE Journal of the Electron Devices Society, 2022, 10, pp.575-583. ⟨10.1109/JEDS.2022.3166683⟩. ⟨hal-03867253⟩