Processing and electrical characterization of SiC-on-Insulator structures

Guillaume Gelineau (1) , Cédric Masante (1) , Emmanuel Rolland (1) , Sophie Barbet (1) , Lucie Corbin (1) , Agathe Andre (2) , Loïc Turchetti (3) , Séverin Rouchier (4) , Alexandre Moulin (1) , Mathieu Delcroix (1) , Nicolas Troutot (1) , Stéphanie Huet (1) , Vladimir Prudkovskiy (1) , Karine Mony (5) , Julie Widiez (1)

1 DCOS - Département Composants Silicium
2 DPFT - Département Plate-Forme Technologique
3 SOITEC SOITEC Lab
4 Soitec SA
5 IRIG - Institut de Recherche Interdisciplinaire de Grenoble

Ion slicing technologies are becoming increasingly popular among silicon carbide (SiC) processing techniques, whether for manufacturing substrates for power electronics [1], [2] or integration platforms for optical devices [3]. For either of these applications, one as to ensure the excellent quality of the transferred layer. In this extent, silicon carbide-on-insulator (SICOI) structures can be of great interest in order to probe the properties of the transferred layer alone. The electrically insulating oxide layer between the receiver substrate and the transferred layer allows one to measure the electrical properties of the transferred layer, and to investigate the deep level defects created by the ion implantation step [4]. We thus report the fabrication process of such a SICOI structure, using a monocrystalline 4H-SiC wafer as the handle substrate. The choice of the later minimizes the difference of the thermal dilatation coefficients of the transferred layer and the substrate, as compared to the use of a Si handle [5], as well as allowing to benefit of a higher melting point. Doing so enables to access higher annealing temperatures, and to understand more acutely the effects of such manufacturing processes. [1] S. Rouchier, et al., Trans Tech Publications, vol. 1062, pp. 131-135, 2021. [2] K. Imaoka et al., US patent 9,761,479 B2, 2017. [3] A. Yi et al., Optical Materials, vol. 107, p. 109990, 2020. [4] X. Zhang et al., Nuc. Inst. Methods Phys. Res. B, vol. 436, pp. 107-111, 2018. [5] E. Hugonnard-Bruyère, et al., Mat. Sci. Eng.: B, vol. 61-62, pp. 382-388, 1999.

Domaines: Matériaux; Science des matériaux [cond-mat.mtrl-sci]

Guillaume Gelineau, Cédric Masante, Emmanuel Rolland, Sophie Barbet, Lucie Corbin, et al.. Processing and electrical characterization of SiC-on-Insulator structures. ICSCRM 2023 - the International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy. ⟨cea-04557058⟩