The coupled atom transistor

Xavier Jehl (1) , Benoit Voisin (1) , Benoît Roche (1) , E. Dupont-Ferrier (1) , Silvano de Franceschi (1) , M. Sanquer (1) , M. Cobian (2) , Yann-Michel Niquet (2) , B. Sklenard (3) , Olga Cueto (3) , Romain Wacquez (3) , Maud Vinet (3)

1 LaTEQS - Laboratoire de Transport Electronique Quantique et Supraconductivité
2 LSIM - Laboratory of Atomistic Simulation
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport spectroscopy through these donors placed in series is performed both at zero and microwave frequencies. The coherence of the charge transfer between the two donors is probed by Landau-Zener-Stuckelberg interferometry. Single-charge transfer at zero bias (electron pumping) has been performed and the crossover between the adiabatic and non-adiabatic regimes is studied.

Mots clés: semiconductor physics; single dopants; nanoelectronics; Double-Quantum Dots; Silicon; Spin; Blockade; Donors

Domaines: Physique [physics]

Xavier Jehl, Benoit Voisin, Benoît Roche, E. Dupont-Ferrier, Silvano de Franceschi, et al.. The coupled atom transistor. Journal of Physics: Condensed Matter, 2015, 27 (15), pp.154206. ⟨10.1088/0953-8984/27/15/154206⟩. ⟨hal-01611290⟩