Correlative analysis using time-of-flight secondary ion mass spectrometry for beam sensitive samples

Jean-Paul Barnes (1) , Claire Guyot (1) , Pierre Hirchenhahn (1) , Amanda Gomes de Carvalho (1) , Nicolas Gauthier (1) , Tony Maindron (1) , Benoit Gilquin (1) , David Ratel (1) , Christophe Gaude (1) , O. Renault (1) , Anouk Galtayries (2) , Gregory L. Fisher (3) , C. Seydoux (4) , Pierre-Henri Jouneau (4)

1 DPFT - Département Plate-Forme Technologique
2 IRCP - Institut de Recherche de Chimie Paris
3 PHI - Physical electronics
4 MEM - Modélisation et Exploration des Matériaux

Time-of-flight Secondary Ion Mass Spectrometry (TOF-SIMS) is now widely used for materials analysis in domains such as semiconductor and energy applications. These challenging applications also provide access to well-controlled, custom made samples that have allowed the limits of TOF-SIMS analysis to be identified and helped in the development of correlative analysis approaches. Recent examples include combining AFM measurements with TOF-SIMS depth profiling to correct for sputter rate differences [1] or to measure mechanical or electrical properties and performing X-ray tomography prior to FIB-TOF-SIMS analysis to allow morphological and compositional data from the same volume to be visualized [2]. Currently we are working on two aspects. Firstly improving the quantification and chemical sensitivity of the technique by combining TOF-SIMS with photoemission techniques (XPS or XPEEM), and secondly trying to improve the lateral resolution by correlation with SEM and AFM measurements. Recent examples will be shown for the analysis of beam sensitive organic samples such as OLED devices, brain tissue samples after medical device implantation [3] and symbiotic microorganisms [4]. As well as the correlative aspects between techniques, we will show how tandem mass spectrometry can help in analyzing complex organic samples. In all cases the importance of sample preparation is paramount, especially for biological samples. For example, for the correlation between TOF-SIMS and XPS on OLED samples, a wedge crater protocol has been developed to allow analysis on exactly the same area of the sample whilst minimizing beam damage to the sample. Wedge crater preparation and transfer between instruments is performed under a protected environment (vacuum or inert gas) to avoid unwanted surface modifications.

Domaines: Instrumentations et Détecteurs [physics.ins-det]; Matériaux

Jean-Paul Barnes, Claire Guyot, Pierre Hirchenhahn, Amanda Gomes de Carvalho, Nicolas Gauthier, et al.. Correlative analysis using time-of-flight secondary ion mass spectrometry for beam sensitive samples. AVS69 - 69th International Symposium & Exhibition, Nov 2023, Portland, United States. ⟨cea-04349703⟩