CMOS FD-SOI Technologies Ruggedness for Millimeter Wave Power Amplifier Design

Baudouin Martineau (1) , Alice Bossuet (1) , Alexis Divay (2) , Benjamin Blampey (2) , Y. Morandini (3)

1 DSYS - Département Systèmes
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 SOITEC

This paper studies the reliability that CMOS FD-SOI can achieved for mmWave Power Amplifier (PA) applications. The technology opportunity and constraints are also shown. To demonstrate the capability of such technology, a highly rugged power-amplifier for the Ka band radio (26.5-40GHz) applications implemented in a CMOS 22FDX process is presented. By using design techniques together with an optimized supply voltage reduction, the power amplifier achieves an excellent reliability even under the worst mismatch condition (VSWR) of 7:1. These results validate the capability of the technology for highly reliable power amplifier for mmWave 5G applications.

Mots clés: FD-SOI; reliability; 22nm; mmWave power amplifier; Ka band; SOI; FDX; ruggedness; HCI; TDDB

Domaines: Micro et nanotechnologies/Microélectronique

Baudouin Martineau, Alice Bossuet, Alexis Divay, Benjamin Blampey, Y. Morandini. CMOS FD-SOI Technologies Ruggedness for Millimeter Wave Power Amplifier Design. 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Oct 2022, Glasgow, United Kingdom. IEEE, 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), pp.1-4, 2022, ⟨10.1109/ICECS202256217.2022.9970935⟩. ⟨cea-04177383⟩