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Toward the Next generation of Non Volatile Phase-Change Memory Targeting Ultra-Low Power Consumption

Abstract : In a world transitioning to the digital era, the necessity to store a large amount of information in a limited space is becoming crucial. Therefore, the device down-scaling and the consequent increase in the memory density are highly relevant. The most diffused memory technology, i.e., the Flash, is not suitable to fulfil the scaling requirements at low-cost. As an alternative to Flash, recently, Non-Volatile Resistive Memories (NVRMs) were developed. One of the most promising NVRMs in terms of scalability is the Phase-Change Memory (PCM); however, it lacks thermal efficiency since only 1% of the energy generated during the programming of the cell is used to store the information.In this work, the thermal optimization of the cell is carried out by focusing on three main aspects: i) the measurement of the thermal conductivity of the materials integrated in the device; ii) the 3D electro-thermal simulations identifying the main sources of dissipation in the cell; iii) the electrical characterization.As a result, different approaches for thermally-engineered state-of-art PCM were proposed, targeting low-power automotive or aerospace applications.
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https://tel.archives-ouvertes.fr/tel-03527519
Contributor : Abes Star :  Contact
Submitted on : Sunday, January 16, 2022 - 1:01:24 AM
Last modification on : Friday, March 25, 2022 - 9:40:58 AM
Long-term archiving on: : Sunday, April 17, 2022 - 6:05:19 PM

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SERRA_2021_archivage.pdf
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  • HAL Id : tel-03527519, version 1

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STAR | CEA | DRT | LETI | CEA-GRE

Citation

Anna Lisa Serra. Toward the Next generation of Non Volatile Phase-Change Memory Targeting Ultra-Low Power Consumption. Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes [2020-..], 2021. English. ⟨NNT : 2021GRALT030⟩. ⟨tel-03527519⟩

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