SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering

Viktoriia Gorbenko (1, 2) , Franck Bassani (1) , Alexandre Merkulov , Thierry Baron (1) , Mickaël Martin (1) , Sylvain David (1) , Jean-Paul Barnes (3)

1 LTM - Laboratoire des technologies de la microélectronique
2 DACLE-LETI - Département d'Architectures, Conception et Logiciels Embarqués-LETI
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Chemical depth profiling of III–V trenches containing InGaAs quantum wells with AlAs barriers selectively grown inside SiO2 cavities was studied using magnetic secondary ion mass spectrometry (SIMS). The authors show that the depth resolution of SIMS profiles of III-As layers degrades under extremely low energy oxygen beam sputtering (<500 eV) due to ripple formation and an increase in surface roughness. Improved SIMS depth resolution was observed by increasing the incident angle (∼50°–65°). Finally, the authors report the effect of sample rotation and orientation of the ion beam with respect to the trenches on depth profiling of III-As layers using time-of-flight SIMS.

Domaines: Micro et nanotechnologies/Microélectronique

Viktoriia Gorbenko, Franck Bassani, Alexandre Merkulov, Thierry Baron, Mickaël Martin, et al.. SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2016, 34 (3), pp.03H131. ⟨10.1116/1.4944632⟩. ⟨hal-01881953⟩