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Article Dans Une Revue Electronics Année : 2015

Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

Résumé

The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.
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Dates et versions

hal-01257014 , version 1 (19-07-2019)

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Sofiane Belhasene, Noor Alhuda Al Saqri, Dler Jameel, Abdelmadjid Mesli, Anthony Martinez, et al.. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation. Electronics, 2015, 4 (4), pp.1090-1100. ⟨10.3390/electronics4041090⟩. ⟨hal-01257014⟩
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