Modular EUV Source for the Next Generation Lithography

Olivier Sublemontier (1) , M. Rosset-Kos (2) , T. Ceccotti (2) , J.-F. Hergott (2) , T. Auguste (2) , D. Normand (2) , M. Schmidt (2) , F. Beaumont (3) , D. Farcage (3) , G. Cheymol (3) , J.-M. Le Caro (3) , P. Cormont (3) , P. Mauchien (3) , P.-Y. Thro (3) , J. Skrzypczak (4) , S. Muller (4) , E. Marquis (4) , B. Barthod , I. Gaurand , M. Davenet , R. Bernard

1 LFP - URA 2453 - Laboratoire Francis PERRIN
2 SPAM - Service des Photons, Atomes et Molécules
3 LILM - Laboratoire d'Interaction Laser Matière
4 TRT - Thales Research and Technologies [Orsay]

The present work, performed in the frame of the EXULITE project, was dedicated to the design and characterization of a laser-plasma-produced extreme ultraviolet (EUV) source prototype at 13.5 nm for the next generation lithography. It was conducted in cooperation with two laboratories from CEA, ALCATEL and THALES. One of our approach originalities was the laser scheme modularity. Six Nd:YAG laser beams were focused at the same time on a xenon filament jet to generate the EUV emitting plasma. Multiplexing has important industrial advantages and led to interesting source performances in terms of in-band power, stability and angular emission properties with the filament jet target. A maximum conversion efficiency (CE) value of 0.44% in 2π sr and 2% band-width was measured, which corresponds to a maximum in band EUV mean power of 7.7 W at a repetition rate of 6 kHz. The EUV emission was found to be stable and isotropic in these conditions.

Mots clés: EUV lithography; EUV source; laser multiplexing; xenon filament jet; laser-produced plasma

Domaines: Chimie théorique et/ou physique

Olivier Sublemontier, M. Rosset-Kos, T. Ceccotti, J.-F. Hergott, T. Auguste, et al.. Modular EUV Source for the Next Generation Lithography. Journal of Laser Micro/Nanoengineering, 2011, 6 (2), pp.113-118. ⟨10.2961/jlmn.2011.02.0004⟩. ⟨hal-00658816⟩