Crossbar arrays based on "Wall" Phase-Change Memory (PCM) and Ovonic-Threshold Switching (OTS) selector: a device integration challenge towards new computing paradigms in embedded applications

G. Bourgeois (1) , V. Meli (1) , R. Antonelli (1) , C. Socquet-Clerc (1) , T. Magis (1) , F. Laulagnet (1) , B. Hemard (1) , M. Bernard (1) , L. Fellouh (1) , P. Dezest (1) , J. Krawczyk (1) , S. Dominguez (1) , F. Baudin (1) , J. Garrione (1) , C. Pellissier (1) , J.-A. Dallery (1) , N. Castellani (1) , M.-C. Cyrille (1) , C. Charpin (1) , F. Andrieu (1) , G. Navarro (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

In this work, we demonstrate the integration feasibility of Crossbar arrays based on Ovonic-Threshold Switching (OTS) selector and "Wall"-based Phase-Change Memory, realized with a "Double-Patterned Self-Aligned" (DPSA) structure in the Back-End-of-Line (BEOL) of the CMOS fabrication. We fabricated devices with critical dimensions down to 60 nm×80 nm, integrating materials providing improved thermal stability (against BEOL thermal budget). Preliminary statistical electrical tests performed in 1 kb 1T1S1R arrays confirm the devices correct programming and cycling operations. These results pave the way to the integration of Crossbar arrays in embedded applications.

Mots clés: Crossbar; "Wall" PCM; OTS selector)

Domaines: Matériaux

G. Bourgeois, V. Meli, R. Antonelli, C. Socquet-Clerc, T. Magis, et al.. Crossbar arrays based on "Wall" Phase-Change Memory (PCM) and Ovonic-Threshold Switching (OTS) selector: a device integration challenge towards new computing paradigms in embedded applications. IEEE EDTM 2023 - 7th IEEE Electron Devices Technology and Manufacturing, IEEE, Mar 2023, SEOUL, South Korea. ⟨10.1109/EDTM55494.2023.10102961⟩. ⟨cea-04098047⟩