Multilayered Sb-rich GeSbTe phase-change memory for best endurance and reduced variability - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Electron Devices Year : 2022

Multilayered Sb-rich GeSbTe phase-change memory for best endurance and reduced variability

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Abstract

Sb-rich GeSbTe based Phase-Change Memories (PCM) were studied in the last years for their high switching speed to target Storage Class Memory (SCM) applications. In this work, we show the advantages of an engineered Multilayered Sb-rich GeSbTe stack compared to standard bulk reference materials. The studied Multilayer-based PCM devices feature a lower programming current with respect to the equivalent bulk ones, preserving a high programming speed. Furthermore, Multilayered Sb-rich GeSbTe brings better endurance performances for a wide programming current range and extremely reduced cycle-to-cycle (C2C) and device-to-device (D2D) variability along cycling verified in 4 kb PCM arrays. These results confirm the improved yield and reliability obtained thanks to Multilayered PCM solution.
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Dates and versions

cea-03938741 , version 1 (13-01-2023)

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Giusy Lama, Mathieu Bernard, Guillaume Bourgeois, Julien Garrione, Valentina Meli, et al.. Multilayered Sb-rich GeSbTe phase-change memory for best endurance and reduced variability. IEEE Transactions on Electron Devices, 2022, 69 (8), pp.4248-4253. ⟨10.1109/TED.2022.3184659⟩. ⟨cea-03938741⟩
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