Multilayered Sb-rich GeSbTe phase-change memory for best endurance and reduced variability

Giusy Lama (1) , Mathieu Bernard (1) , Guillaume Bourgeois (1) , Julien Garrione (1) , Valentina Meli (1) , Niccolo Castellani (1) , Chiara Sabbione (1) , Lucie Prazakova (1) , Diana-Stephany Fernandez Rodas (1) , Emmanuel Nolot (1) , Marie Claire Cyrille (1) , Francois Andrieu (1) , Gabriele Navarro (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Sb-rich GeSbTe based Phase-Change Memories (PCM) were studied in the last years for their high switching speed to target Storage Class Memory (SCM) applications. In this work, we show the advantages of an engineered Multilayered Sb-rich GeSbTe stack compared to standard bulk reference materials. The studied Multilayer-based PCM devices feature a lower programming current with respect to the equivalent bulk ones, preserving a high programming speed. Furthermore, Multilayered Sb-rich GeSbTe brings better endurance performances for a wide programming current range and extremely reduced cycle-to-cycle (C2C) and device-to-device (D2D) variability along cycling verified in 4 kb PCM arrays. These results confirm the improved yield and reliability obtained thanks to Multilayered PCM solution.

Mots clés: Phase-Change Memory (PCM) Multilayer deposition Sb-rich GeSbTe endurance speed Storage Class Memory (SCM); Phase-Change Memory (PCM); Multilayer deposition; Sb-rich GeSbTe; endurance; speed; Storage Class Memory (SCM)

Domaines: Sciences de l'ingénieur [physics]

Giusy Lama, Mathieu Bernard, Guillaume Bourgeois, Julien Garrione, Valentina Meli, et al.. Multilayered Sb-rich GeSbTe phase-change memory for best endurance and reduced variability. IEEE Transactions on Electron Devices, 2022, 69 (8), pp.4248-4253. ⟨10.1109/TED.2022.3184659⟩. ⟨cea-03938741⟩