Ge content optimization in Ge(SbSe)$_{1-x}$N OTS materials for selector applications

Camille Laguna (1, 2) , Mathieu Bernard (1) , Frederic Fillot (1) , Denis Rouchon (1) , Nevine Rochat (1) , Julien Garrione (1) , Lucie Prazakova (1) , Emmanuel Nolot (1) , Valentina Meli (1) , Niccolo Castellani (1) , Simon Martin (1) , Chiara Sabbione (1) , Guillaume Bourgeois (1) , Marie-Claire Cyrille (1) , Liviu Militaru (2) , Abdelkader Souifi (3) , Francois Andrieu (1) , Gabriele Navarro (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 INL - Institut des Nanotechnologies de Lyon
3 BioIng - Ampère, Département Bioingénierie

In this paper, we investigate the influence of germanium content in GeSbSeN based Ovonic Threshold Selector (OTS) devices. We performed physico-chemical analyses on five different Ge x (SbSe) 1-x N alloys in order to understand how the germanium content influences the material structure and its integrity once submitted to temperatures up to 400° C. Thanks to electrical characterization of Ge x (SbSe)$_{1-x}$N OTS devices, we analyze the evolution of the electrical parameters along cycling up to 10$^8$ cycles and before and after annealing at 400° C. Cycle-to-cycle variability and drift phenomenon are also investigated. Finally, we demonstrate how Ge content should be properly tuned in order to improve the thermal stability of the alloy without affecting the leakage current and the electrical parameters variability.

Keywords: Ovonic Threshold Switching selector GeSbSeN Thermal stability Electrical parameter variability; Ovonic Threshold Switching selector; GeSbSeN; Thermal stability; Electrical parameter variability

Domains: Engineering Sciences [physics]

Camille Laguna, Mathieu Bernard, Frederic Fillot, Denis Rouchon, Nevine Rochat, et al.. Ge content optimization in Ge(SbSe)$_{1-x}$N OTS materials for selector applications. IEEE Transactions on Electron Devices, 2022, 69 (11), pp.6277-6283. ⟨10.1109/TED.2022.3203368⟩. ⟨cea-03938734⟩