Ge content optimization in Ge(SbSe)$_{1-x}$N OTS materials for selector applications - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Electron Devices Year : 2022

## Ge content optimization in Ge(SbSe)$_{1-x}$N OTS materials for selector applications

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Camille Laguna
Chiara Sabbione
Guillaume Bourgeois
Marie-Claire Cyrille
Gabriele Navarro

#### Abstract

In this paper, we investigate the influence of germanium content in GeSbSeN based Ovonic Threshold Selector (OTS) devices. We performed physico-chemical analyses on five different Ge x (SbSe) 1-x N alloys in order to understand how the germanium content influences the material structure and its integrity once submitted to temperatures up to 400° C. Thanks to electrical characterization of Ge x (SbSe)$_{1-x}$N OTS devices, we analyze the evolution of the electrical parameters along cycling up to 10$^8$ cycles and before and after annealing at 400° C. Cycle-to-cycle variability and drift phenomenon are also investigated. Finally, we demonstrate how Ge content should be properly tuned in order to improve the thermal stability of the alloy without affecting the leakage current and the electrical parameters variability.

#### Domains

Engineering Sciences [physics]

### Dates and versions

cea-03938734 , version 1 (13-01-2023)

### Identifiers

• HAL Id : cea-03938734 , version 1
• DOI :

### Cite

Camille Laguna, Mathieu Bernard, Frederic Fillot, Denis Rouchon, Nevine Rochat, et al.. Ge content optimization in Ge(SbSe)$_{1-x}$N OTS materials for selector applications. IEEE Transactions on Electron Devices, 2022, 69 (11), pp.6277-6283. ⟨10.1109/TED.2022.3203368⟩. ⟨cea-03938734⟩

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