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Multilayer structure in SeAsGeSi-based OTS for high thermal stability and reliability enhancement

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Abstract

In this paper, we present an innovative Multilayer SeAsGeSi-based Ovonic Threshold Switching (OTS) Selector targeting high reliability for Crossbar arrays. We compare our Multilayer (ML) OTS with SeAsGeSi-based bulk alloy (SAGS). We demonstrate the high thermal stability of the ML stack against the Back-End-of-Line (BEOL) thermal budget as well as the reduction of the device-to-device variability and reliable switching operations up to 300°C. We study by Raman and FTIR spectroscopy the integrity of the ML OTS material after an annealing of 3 hours at 400°C. SeAsGeSi Multilayer OTS delays crystallization mechanism along cycling. We finally report the successful co-integration of our ML with Phase-Change Memory technology
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Dates and versions

cea-03927024 , version 1 (06-01-2023)

Identifiers

Cite

C. Laguna, M. Bernard, J. Garrione, N. Castellani, V. Meli, et al.. Multilayer structure in SeAsGeSi-based OTS for high thermal stability and reliability enhancement. ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. pp.225-228, ⟨10.1109/ESSDERC55479.2022.9947186⟩. ⟨cea-03927024⟩
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