A mixed method to mitigate the TID effects on 28nm FDSOI transistors

Alejandro Ureña-Acuña (1) , Jean-Marc Armani (1) , Mariem Slimani (1) , Mikael Casse (2) , Philippe Dollfus (3)

1 LFIC (CEA, LIST) - Laboratoire Fiabilité et Intégration de Capteurs (CEA, LIST)
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 C2N - Centre de Nanosciences et de Nanotechnologies

In this work we propose a mixed method to mitigate the effects of Total Ionizing Dose (TID) on 28 nm Fully-Depleted Silicon-On-Insulator (FDSOI) MOSFETs exposed to 60Co gamma radiation at two different dose rates. This new thermal-electrical method uses thermal regeneration by applying rapid annealing cycles in addition to threshold voltage modulation inherent in FDSOI technology. Applying this methodology could enhance the transistor reliability during a mission in radiative environments.

Mots clés: instrumentation; nuclear instrumentation; ionizing radiation; Total Ionizing Dose; Fully-Depleted Silicon-On-Insulator (FDSOI); gamma-rays; dosimetry; dose rate; thermal regeneration; annealing; transistor; reliability; Defect; Degradation; Rapid thermal annealing; Silicon-on-insulator; Threshold voltage; Integrated circuit reliability; electric compensation; elemental semiconductors; modulation; MOSFET; semiconductor device reliability; silicon; silicon-on-insulator; FDSOI

Domaines: Electronique; Physique Nucléaire Expérimentale [nucl-ex]

Alejandro Ureña-Acuña, Jean-Marc Armani, Mariem Slimani, Mikael Casse, Philippe Dollfus. A mixed method to mitigate the TID effects on 28nm FDSOI transistors. Radecs 2020 - 20th European Conference on Radiation and Its Effects on Components and Systems, Oct 2020, Toulouse (virtual event), France. ⟨10.1109/RADECS50773.2020.9857702⟩. ⟨cea-03920742⟩