A mixed method to mitigate the TID effects on 28nm FDSOI transistors - Archive ouverte HAL Access content directly
Conference Papers Year : 2022

A mixed method to mitigate the TID effects on 28nm FDSOI transistors

(1) , (1) , (1) , (2) , (3)
1
2
3

Abstract

In this work we propose a mixed method to mitigate the effects of Total Ionizing Dose (TID) on 28 nm Fully-Depleted Silicon-On-Insulator (FDSOI) MOSFETs exposed to 60Co gamma radiation at two different dose rates. This new thermal-electrical method uses thermal regeneration by applying rapid annealing cycles in addition to threshold voltage modulation inherent in FDSOI technology. Applying this methodology could enhance the transistor reliability during a mission in radiative environments.
Fichier principal
Vignette du fichier
article_AlejandroUrena-Acuna_FDSOI_RADECS2020.pdf (611.77 Ko) Télécharger le fichier
Origin : Publication funded by an institution

Dates and versions

cea-03920742 , version 1 (03-01-2023)

Identifiers

Cite

Alejandro Ureña-Acuña, Jean-Marc Armani, Mariem Slimani, Mikael Casse, Philippe Dollfus. A mixed method to mitigate the TID effects on 28nm FDSOI transistors. Radecs 2020 - 20th European Conference on Radiation and Its Effects on Components and Systems, Oct 2020, Toulouse (virtual event), France. ⟨10.1109/RADECS50773.2020.9857702⟩. ⟨cea-03920742⟩
0 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More