Highly transparent PZT capacitors on glass obtained by layer transfer process
Abstract
Transparent ITO/PZT/ITO capacitors were fabricated on 200 mm glass substrate. The PZT films of 1 µm and 2 µm thickness were first grown on platinized Si wafer by sol-gel method, and then transferred onto glass substrate together with ITO electrodes following an innovative process. The obtained PZT based stacks on glass show an average transmission of about 70 % in the visible range. PZT films keep their preferred (100) orientation after transfer process. The capacitors exhibit ferroelectric, dielectric and piezoelectric properties comparable to standard non-transparent PZT films with metal electrodes. Transverse piezoelectric coefficient e31,f as high as 16 C/m² was measured for both PZT film thicknesses. This proof of concept opens the way to the fabrication of transparent piezoelectric actuators on glass for high performances haptic devices, as well as for other emerging applications like self-cleaning or functionalization of smart windows.