Evaluation of total ionizing dose effects on commercial FRAMs

Mariem Slimani (1) , Jean-Marc Armani (1) , Rémi Gaillard (2)

1 LFIC - Laboratoire Fiabilité et Intégration de Capteurs
2 Independent Consultant

This work evaluates the sensitivity of two commercial ferroelectric random access memories to total ionizing dose. Functional failure analysis and current measurements have been performed as a function of total ionizing dose. Results of testing under Co-60 gamma radiation show a huge difference of radiation hardness levels between FRAM references and give an idea of the most sensitive part causing failure on each memory chip. Annealing responses at room temperature have been reported.

Keywords: instrumentation; nuclear instrumentation; ionizing radiation; ionizing dose; dosimetry; defect; Functional failure analysis; gamma-rays; Diagnosis; radiation hardness; Annealing; Random access memory; Nonvolatile memory; Ferroelectric films; Computer architecture; Microprocessors; Radiation effects; electric current measurement; failure analysis; ferroelectric storage; gamma-ray effects; integrated circuit reliability; integrated circuit testing; radiation hardening; random-access storage; sensitivity analysis

Domains: Electronics; Nuclear Experiment [nucl-ex]

Mariem Slimani, Jean-Marc Armani, Rémi Gaillard. Evaluation of total ionizing dose effects on commercial FRAMs. NSREC 2018 - IEEE Nuclear & Space Radiation Effects Conference, Jul 2018, Waikoloa Village, United States. pp.8584287, ⟨10.1109/NSREC.2018.8584287⟩. ⟨cea-03920390⟩