Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling

Florian Rigaud-Minet (1, 2, 3) , Julien Buckley (1, 2) , William Vandendaele (2) , Stéphane Becu (1, 2) , Matthew Charles (2) , Jérôme Biscarrat (1, 2) , Romain Gwoziecki (1, 2) , Charlotte Gillot (1, 2) , Véronique Sousa (1, 2) , Hervé Morel (3, 4) , Dominique Planson (3, 4)

1 DCOS - Département Composants Silicium
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 EE - Ampère, Département Energie Electrique
4 INSA Lyon - Institut National des Sciences Appliquées de Lyon

The current temperature dependence of a 3.9 μm GaN-on-Silicon epitaxy at temperatures ranging from 25 °C to 200 °C and for voltages beneath the plateau limited by the carrier generation in the p-doped substrate is analyzed. Based upon a fit with analytical transport models, the vertical current is reported for the first time to be the superposition of three different transport mechanisms: Recombination limited at low and middle voltages for low temperatures, Ohmic at low and middle voltages for high temperatures and Nearest Neighbor Hopping (NNH) at high voltages. Thanks to their temper-ature dependences and therefore to their energy, the transports can be related to either point defects clustered around threading dislocations or to interstitial nitrogen.

Domaines: Electronique

Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Stéphane Becu, Matthew Charles, et al.. Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling. SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan. ⟨cea-03875079⟩