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Journal Articles Energies Year : 2022

Capacitance temperature dependence analysis of GaN-on-Si power transistors

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Abstract

Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three different temperatures: 25°C, 75°C and 150°C of GaN-on-Si power transistors. In particular, this study focus on the temperature dependence of depletion voltage seen in these characteristics due to the progressive depletion of the Two-Dimensional Electron Gas (2DEG) under the device field plates. First, variations of the epitaxial growth are studied, showing that the intrinsic carbon concentration does not play a significant role. Secondly, the deep acceptor trap origin of the temperature dependence is analyzed with a TCAD simulation study. Thirdly, by performing a fit between TCAD simulation and experimental data, a linear relationship between the acceptor trap energy and its cross-section is obtained. The comparison of these properties with the acceptor traps identified in the state of the art suggests that the origin is a gallium vacancy tied to oxygen atom(s) on the N site.
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cea-03874112 , version 1 (27-11-2022)

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Attribution - CC BY 4.0

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Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, et al.. Capacitance temperature dependence analysis of GaN-on-Si power transistors. Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩. ⟨cea-03874112⟩
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