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Recent advances in GaN power devices development at CEA-LETI

Abstract : In this paper we present recent results obtained on GaN Power devices at CEA-LETI. In a first part, we will discuss the benefits of AlGaN/GaN MOS channel High Electron Mobility Transistors (MOSc HEMTs) with fully recessed gate architecture on 200mm Si substrates with respect to their pGaN HEMT counterparts for 650V applications, especially in terms of On-state resistance Ron, gate leakage and temperature dependency. In the second part, we will discuss the gain expected from vertical device architectures on GaN.
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https://hal-cea.archives-ouvertes.fr/cea-03870230
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Submitted on : Thursday, November 24, 2022 - 4:12:32 PM
Last modification on : Friday, November 25, 2022 - 3:55:19 AM

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  • HAL Id : cea-03870230, version 1

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CEA | DRT | LETI | CEA-GRE | ANR

Citation

Romain Gwoziecki, Julien Buckley, Cyrille Le Royer, Laura Vauche, Blend Mohamad, et al.. Recent advances in GaN power devices development at CEA-LETI. GaN MARATHON, Jun 2022, Venise, Italy. ⟨cea-03870230⟩

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