Skip to Main content Skip to Navigation
New interface
Conference papers

Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface in Gate-First MOSc-HEMT Process Flow

Abstract : In this work, we investigate the impact of Post-Deposition Anneal (PDA) of Atomic-Layer Deposited (ALD) Al2O3 on etched GaN for MOS-channel High Electron Mobility Transistors (MOSc-HEMTs) Gate-First process flow using C-V measurements carried out on MOS capacitors (MOSCAPs). For PDA up to 500°C, a reduction of the flat-band voltage hysteresis (ΔVFB) is reported and explained by the reduction of Ga-O bonds and O-H groups observed by Hard X-Ray Photoelectron Spectroscopy (HAXPES) analysis, the latter being confirmed by Fourier Transform Infrared Spectroscopy (FTIR). For a 600°C PDA, Grazing Incidence XRD (GIXRD) analysis shows a small crystallized κ-Al2O3 signal on etched GaN, which is absent for asgrown GaN. This beginning of crystallization could explain the degradation in ΔVFB and breakdown field for PDA above 500°C observed on MOSCAPs after the Gate-First process flow overall thermal budget.
Complete list of metadata

https://hal-cea.archives-ouvertes.fr/cea-03846232
Contributor : Contributeur MAP CEA Connect in order to contact the contributor
Submitted on : Thursday, November 10, 2022 - 9:30:24 AM
Last modification on : Saturday, November 12, 2022 - 3:05:55 AM

File

 Restricted access
To satisfy the distribution rights of the publisher, the document is embargoed until : 2023-05-09

Please log in to resquest access to the document

Identifiers

  • HAL Id : cea-03846232, version 1

Collections

Citation

Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Blend Mohamad, William Vandendaele, Eugénie Martinez, et al.. Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface in Gate-First MOSc-HEMT Process Flow. GaN MARATHON, Jun 2022, Venise, Italy. ⟨cea-03846232⟩

Share

Metrics

Record views

0