Deposition and properties of ZnSiO3-containing zinc oxide thin films reactively sputtered at room temperature - Archive ouverte HAL Access content directly
Journal Articles Thin Solid Films Year : 2020

Deposition and properties of ZnSiO3-containing zinc oxide thin films reactively sputtered at room temperature

(1) , (1) , (1) , (2, 3) , (4) , (1)
1
2
3
4

Abstract

Zinc oxide thin films were deposited on glass substrates using reactive radio-frequency sputtering at room temperature over a range of radio-frequency powers (from 100 to 250 W). The morphological, structural and optical properties of the deposited thin films were investigated using X-ray diffraction, optical transmission measurements, scanning electron microscopy, and photoluminescence measurements. All the as-grown thin films consist of hexagonal ZnO, and a crystalline ZnSiO3 phase for several radio-frequency powers. The post-annealing in air at 550 °C results in the deterioration of the ZnSiO3 phase and an improvement in the ZnO crystallinity of the samples, with a crystallite size ranging from 20 to 30 nm. The clustering of the post-annealed sample is promoted by a critical amount of ZnSiO3 in the as-grown samples. Optical transmission and photoluminescence analyses revealed the bandgap and the energy transitions in the deposited ZnO. As-grown thin films exhibit a direct bandgap of 3.29 eV. Crystalline ZnSiO3 was found to enable a direct transition with an energy of 2.87 eV at room temperature.
Not file

Dates and versions

cea-03748607 , version 1 (09-08-2022)

Identifiers

Cite

Nabil Rochdi, Abdelaziz El Boujlaidi, Ahmad Afkir, Enrique Vega, Saïd Yagoubi, et al.. Deposition and properties of ZnSiO3-containing zinc oxide thin films reactively sputtered at room temperature. Thin Solid Films, 2020, 709, pp.138218. ⟨10.1016/j.tsf.2020.138218⟩. ⟨cea-03748607⟩
20 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More