Determination of the far-infrared dielectric function of a thin InGaAs layer using a detuned Salisbury screen

Tuan Nghia Le (1, 2, 3) , Jean-Luc Pelouard (4) , Fabrice Charra (2, 1, 3) , Simon Vassant (2, 1, 3)

1 Université Paris-Saclay
2 SPEC - UMR3680 - Service de physique de l'état condensé
3 LEPO - Laboratoire d'Electronique et nanoPhotonique Organique
4 C2N - Centre de Nanosciences et de Nanotechnologies

We present a method to determine the far-infrared dielectric function parameters of a thin In$_{0.53}$Ga$_{0.47}$As layer. We use a detuned Salisbury screen configuration to enhance the interaction of far infrared light with optical phonons in the InGaAs layer. From polarized angle-resolved reflectance spectrum and Raman spectroscopy, we obtain experimental data that we adjust using a dielectric function model fulfilling causality. We provide a complete set of parameters for an analytic expression of In$_{0.53}$Ga$_{0.47}$As dielectric function in the optical phonon frequency range and deduce a value for the static dielectric constant.

Domaines: Physique [physics]

Tuan Nghia Le, Jean-Luc Pelouard, Fabrice Charra, Simon Vassant. Determination of the far-infrared dielectric function of a thin InGaAs layer using a detuned Salisbury screen. Optical Materials Express, 2022, 12 (7), pp.2711-2723. ⟨10.1364/ome.455445⟩. ⟨cea-03739487⟩