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Determination of the far-infrared dielectric function of a thin InGaAs layer using a detuned Salisbury screen

Tuan Nghia Le 1, 2, 3 Jean-Luc Pelouard 4 Fabrice Charra 2, 1, 3 Simon Vassant 2, 1, 3, * 
* Corresponding author
3 LEPO - Laboratoire d'Electronique et nanoPhotonique Organique
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
Abstract : We present a method to determine the far-infrared dielectric function parameters of a thin In$_{0.53}$Ga$_{0.47}$As layer. We use a detuned Salisbury screen configuration to enhance the interaction of far infrared light with optical phonons in the InGaAs layer. From polarized angle-resolved reflectance spectrum and Raman spectroscopy, we obtain experimental data that we adjust using a dielectric function model fulfilling causality. We provide a complete set of parameters for an analytic expression of In$_{0.53}$Ga$_{0.47}$As dielectric function in the optical phonon frequency range and deduce a value for the static dielectric constant.
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https://hal-cea.archives-ouvertes.fr/cea-03739487
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Submitted on : Wednesday, July 27, 2022 - 3:55:49 PM
Last modification on : Monday, September 12, 2022 - 12:18:28 PM

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Tuan Nghia Le, Jean-Luc Pelouard, Fabrice Charra, Simon Vassant. Determination of the far-infrared dielectric function of a thin InGaAs layer using a detuned Salisbury screen. Optical Materials Express, OSA pub, 2022, 12 (7), pp.2711-2723. ⟨10.1364/ome.455445⟩. ⟨cea-03739487⟩

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