Determination of the far-infrared dielectric function of a thin InGaAs layer using a detuned Salisbury screen - Archive ouverte HAL Access content directly
Journal Articles Optical Materials Express Year : 2022

Determination of the far-infrared dielectric function of a thin InGaAs layer using a detuned Salisbury screen

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Abstract

We present a method to determine the far-infrared dielectric function parameters of a thin In$_{0.53}$Ga$_{0.47}$As layer. We use a detuned Salisbury screen configuration to enhance the interaction of far infrared light with optical phonons in the InGaAs layer. From polarized angle-resolved reflectance spectrum and Raman spectroscopy, we obtain experimental data that we adjust using a dielectric function model fulfilling causality. We provide a complete set of parameters for an analytic expression of In$_{0.53}$Ga$_{0.47}$As dielectric function in the optical phonon frequency range and deduce a value for the static dielectric constant.
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Dates and versions

cea-03739487 , version 1 (27-07-2022)

Licence

Attribution - CC BY 4.0

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Tuan Nghia Le, Jean-Luc Pelouard, Fabrice Charra, Simon Vassant. Determination of the far-infrared dielectric function of a thin InGaAs layer using a detuned Salisbury screen. Optical Materials Express, 2022, 12 (7), pp.2711-2723. ⟨10.1364/ome.455445⟩. ⟨cea-03739487⟩
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