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A highly rugged 39 GHz 19.3 dBm power amplifier for 5G applications in 45nm SOI technology

Abstract : This paper describes a highly rugged power-amplifier for the fifth generation (5G) FR2 new radio (NR) application implemented in a 45nm SOI process (45RFSOI). By using device stacking technique together with an optimized supply voltage reduction, the power amplifier achieves 20 dBm Psat and 23 % PAEmax. A Pavg of 10 dBm and a PAEavg of 8% is achieved in 64-QAM 200MHz bandwidth OFDM at EVMavg of 6.2% (-24.1dB) without the use of digital predistortion. The 4:1 VSWR measurement shows an excellent PA reliability even under the worst mismatch condition. These results enable an efficient, high power and highly reliable power amplifier for 5G applications.
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https://hal-cea.archives-ouvertes.fr/cea-03725724
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Submitted on : Monday, July 18, 2022 - 10:00:23 AM
Last modification on : Tuesday, July 19, 2022 - 3:38:32 AM

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Alice Bossuet, Baudouin Martineau, Cedric Dehos, Benjamin Blampey, Alexis Divay, et al.. A highly rugged 39 GHz 19.3 dBm power amplifier for 5G applications in 45nm SOI technology. EuMIC 2021 - 16th European Microwave Integrated Circuits Conference, IEEE, Feb 2021, Londres, United Kingdom. pp.80-83, ⟨10.23919/EuMIC50153.2022.9784044⟩. ⟨cea-03725724⟩

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