A highly rugged 39 GHz 19.3 dBm power amplifier for 5G applications in 45nm SOI technology

Alice Bossuet (1) , Baudouin Martineau (1) , Cedric Dehos (1) , Benjamin Blampey (1) , Alexis Divay (1) , Yvan Morandini (2)

1 DSYS - Département Systèmes
2 SOITEC SA, Crolles

This paper describes a highly rugged power-amplifier for the fifth generation (5G) FR2 new radio (NR) application implemented in a 45nm SOI process (45RFSOI). By using device stacking technique together with an optimized supply voltage reduction, the power amplifier achieves 20 dBm Psat and 23 % PAEmax. A Pavg of 10 dBm and a PAEavg of 8% is achieved in 64-QAM 200MHz bandwidth OFDM at EVMavg of 6.2% (-24.1dB) without the use of digital predistortion. The 4:1 VSWR measurement shows an excellent PA reliability even under the worst mismatch condition. These results enable an efficient, high power and highly reliable power amplifier for 5G applications.

Domains: Micro and nanotechnologies/Microelectronics

Alice Bossuet, Baudouin Martineau, Cedric Dehos, Benjamin Blampey, Alexis Divay, et al.. A highly rugged 39 GHz 19.3 dBm power amplifier for 5G applications in 45nm SOI technology. EuMIC 2021 - 16th European Microwave Integrated Circuits Conference, IEEE, Feb 2021, Londres, United Kingdom. pp.80-83, ⟨10.23919/EuMIC50153.2022.9784044⟩. ⟨cea-03725724⟩